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Design and measurement of waveguide-type PnpN optical thyristors for optical communications
- Authors
- Kim, DG; Lee, HH; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Futakuchi, N; Nakano, Y
- Issue Date
- Jul-2002
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- depleted optical thyristor; finite difference method; waveguide; optical switching; spontaneous emission; optical communication systems
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.7A, pp L765 - L767
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
- Volume
- 41
- Number
- 7A
- Start Page
- L765
- End Page
- L767
- ISSN
- 0021-4922
- Abstract
- Waveguide-type InGaAs/InP multiple quantum well PnpN depleted optical thyristors operating at 1.55 mum are proposed and fabricated for the first time. In this paper, using the finite difference method (FDM), we calculate the effects of parameters such as doping concentration and the thicknesses of the outer and inner layers of the thyristor to determine the optimized structure in the view of fast and low-power-consuming operation. With these results, the fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with a switching voltage of 4.03 V, a holding voltage of 1.77 V, and spontaneous emission along the waveguide.
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