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Improved performances or AlGaAs-GaAsNpnP optical thyristor using bottom mirror layers

Authors
Kim, D.G.Lee, J.J.Choi, Y.W.Lee, S.Woo, D.H.Kang, B.K.Kim, S.H.
Issue Date
Feb-2000
Publisher
IEE-INST ELEC ENG
Citation
ELECTRONICS LETTERS, v.36, no.4, pp 348 - 349
Pages
2
Journal Title
ELECTRONICS LETTERS
Volume
36
Number
4
Start Page
348
End Page
349
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25347
DOI
10.1049/el:20000274
ISSN
0013-5194
1350-911X
Abstract
Significantly improved performances are reported for a fully depleted NpnP optical thyristor with bottom mirror layers. This device shows 20 and 45% enhancement in terms of switching voltage and spontaneous emission efficiency, respectively.
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Choi, Young Wan
창의ICT공과대학 (전자전기공학부)
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