Critical adhesion energy of benzocyclobutene-bonded wafers
- Authors
- Kwon, Y.; Seok, J.; Lu, J.-Q.; Cale, T.S.; Gutmann, R.J.
- Issue Date
- Apr-2006
- Citation
- Journal of the Electrochemical Society, v.153, no.4, pp G347 - G352
- Journal Title
- Journal of the Electrochemical Society
- Volume
- 153
- Number
- 4
- Start Page
- G347
- End Page
- G352
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25562
- DOI
- 10.1149/1.2172551
- ISSN
- 0013-4651
- Abstract
- The dependencies of critical adhesion energy (CAE) of benzocyclobutene (BCB) bonded wafers on BCB thickness, the use of an adhesion promoter, and the materials being bonded are studied using a four-point-bending technique. The thicknesses of BCB used in the experiments ranged from 0.4 to 7.0 μm. The CAE depends linearly on BCB thickness due to the thickness-dependent contribution of plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The CAE increases by approximately a factor of 2 when an AP is used for both 2.6- and 0.4-μm -thick BCB bonding layers because of chemical interactions. The CAEs measured at the interfaces between a Si wafer with plasma-enhanced chemical vapor deposited (PECVD) SiO2 and BCB and between a Si wafer with thermally grown SiO2 and BCB are approximately a factor of 3 higher than the CAE between a PG&O 1737 aluminosilicate glass wafer and BCB. The observed bond energies are about 18 and 22 J m2 at the interfaces between PECVD oxide and BCB and between thermally grown oxide and BCB, respectively. These bond energies correspond to bond densities of 12-13 and 15-16 Si-O bonds nm2. © 2006 The Electrochemical Society. All rights reserved.
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