Adoption of wide-bandgap microcrystalline silicon oxide and dual buffers for semitransparent solar cells in building-integrated photovoltaic window system
- Authors
- Yang, Johwa; Jo, Hyunjin; Choi, Soo-Won; Kang, Dong-Won; Kwon, Jung-Dae
- Issue Date
- Aug-2019
- Publisher
- Chinese Society of Metals
- Keywords
- Building-integrated photovoltaics; Microcrystalline silicon oxide; Semitransparent; Solar cells; Thin film
- Citation
- Journal of Materials Science and Technology, v.35, no.8, pp 1563 - 1569
- Pages
- 7
- Journal Title
- Journal of Materials Science and Technology
- Volume
- 35
- Number
- 8
- Start Page
- 1563
- End Page
- 1569
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/26385
- DOI
- 10.1016/j.jmst.2019.03.041
- ISSN
- 1005-0302
- Abstract
- We focused on developing penetration-type semitransparent thin-film solar cells (STSCs) using hydrogenated amorphous Si (a-Si:H) for a building-integrated photovoltaic (BIPV) window system. Instead of conventional p-type a-Si:H, p-type hydrogenated microcrystalline Si oxide (p-μc-SiO x :H) was introduced for a wide-bandgap and conductive window layer. For these purposes, we tuned the CO 2 /SiH 4 flow ratio (R) during p-μc-SiO x :H deposition. The film crystallinity decreased from 50% to 13% as R increased from 0.2 to 1.2. At the optimized R of 0.6, the quantum efficiency was improved under short wavelengths by the suppression of p-type layer parasitic absorption. The series resistance was well controlled to avoid fill factor loss at R = 0.6. Furthermore, we introduced dual buffers comprising p-a-SiO x :H/i-a-Si:H at the p/i interface to alleviate interfacial energy-band mismatch. The a-Si:H STSCs with the suggested window and dual buffers showed improvements in transmittance and efficiency from 22.9% to 29.3% and from 4.62% to 6.41%, respectively, compared to the STSC using a pristine p-a-Si:H window. © 2019
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