Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Hong, S.-Y. | - |
dc.contributor.author | Kim, H.-J. | - |
dc.contributor.author | Kim, D.-H. | - |
dc.contributor.author | Jeong, H.-Y. | - |
dc.contributor.author | Song, Sang-Hun | - |
dc.contributor.author | Cho, I.-T. | - |
dc.contributor.author | Noh, J. | - |
dc.contributor.author | Yun, P.S. | - |
dc.contributor.author | Lee, S.-W. | - |
dc.contributor.author | Park, K.-S. | - |
dc.contributor.author | Yoon, S.Y. | - |
dc.contributor.author | Kang, I.B. | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-06-26T01:38:07Z | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/26412 | - |
dc.description.abstract | We investigated the lateral distribution of the equilibrium carrier concentration (n 0 ) along the channel and the effects of channel length (L) on the source-drain series resistance (R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n 0 across the channel was extracted using the paired gate-to-source voltage (V GS )-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different Ls. n 0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n 0 was observed in the region near the middle of the channel. The effect of L on the R ext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various Ls. The increase of R ext was clearly observed with an increase in L especially at low V GS s, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high R ext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41598-019-43186-7 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.9, no.1 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000466127100013 | - |
dc.identifier.scopusid | 2-s2.0-85064949100 | - |
dc.citation.number | 1 | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 9 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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