Double-Gate Nanowire Field Effect Transistor for a Biosensor
- Authors
- Ahn, Jae-Hyuk; Choi, Sung-Jin; Han, Jin-Woo; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu
- Issue Date
- Aug-2010
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Double-gate; nanowire; field effect transistor; FinFET; biosensor; sensitivity; avian influenza (AI)
- Citation
- NANO LETTERS, v.10, no.8, pp 2934 - 2938
- Pages
- 5
- Journal Title
- NANO LETTERS
- Volume
- 10
- Number
- 8
- Start Page
- 2934
- End Page
- 2938
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/27784
- DOI
- 10.1021/nl1010965
- ISSN
- 1530-6984
1530-6992
- Abstract
- A silicon nanowire field effect transistor (PET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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