Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface
- Authors
- Kim, Soo Young; Lee, Jong-Lam
- Issue Date
- Oct-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- interface dipole; Alq(3) synchrotron radiation photoemission spectroscopy; work function; organic light emitting diodes
- Citation
- ORGANIC ELECTRONICS, v.9, no.5, pp 678 - 686
- Pages
- 9
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 9
- Number
- 5
- Start Page
- 678
- End Page
- 686
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28012
- DOI
- 10.1016/j.orgel.2008.04.010
- ISSN
- 1566-1199
- Abstract
- We determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and tris(8-hydroxyquinoline) aluminum using ultraviolet and synchrotron radiation photoemission spectroscopy. After O-2 plasma treatment on 20-nm thick metal coated ITO, the work function and interface dipole energy increased. In 2-nm thick metal coated ITO, no change in the interface dipole energy was found though the work function increased. According to the valence band spectra, 2-nm thick metals are fully oxidized, but 20-nm thick metals are partially oxidized after O-2 plasma treatment. Therefore, it is considered that the contribution of the surface dipole by the deposition of Alq(3) on 2-nm thick metal is lower, resulting in a lower interface dipole. Thus, the thickness of interfacial layer has a great impact on the formation of interface dipole. (C) 2008 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
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