In situ determination of interface dipole energy in organic light emitting diodes with iridium interfacial layer using synchrotron radiation photoemission spectroscopy
- Authors
- Kim, Soo Young; Lee, Jong-Lam
- Issue Date
- Nov-2006
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.22
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 89
- Number
- 22
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28022
- DOI
- 10.1063/1.2398901
- ISSN
- 0003-6951
1077-3118
- Abstract
- The interface dipole energies between 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl and Ir interfacial layers with different thicknesses (2 and 20 nm) coated on indium tin oxides (ITOs) were measured in situ using synchrotron radiation photoemission spectroscopy. In 20 nm Ir coated ITO, the work function increment of 0.15 eV due to O-2 plasma treatment was accompanied by an increase of interface dipole energy. In 2 nm Ir coated ITO, no change in the interface dipole energy was found. Thus, the work function increase (0.45 eV) in the 2 nm Ir by O-2 plasma treatment reduced the hole injection barrier by about 0.45 eV.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.