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Direct Evidence of Hole Injection Enhanced by O-2 Plasma Treatment on Indium Tin Oxide
- Authors
- Kim, Soo Young; Lee, Jong-Lam
- Issue Date
- Sep-2005
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- organic light emitting diodes; hole injection barrier; x-ray photoemission spectroscopy; O-2 plasma treatment; indium tin oxide
- Citation
- ELECTRONIC MATERIALS LETTERS, v.1, no.1, pp 59 - 62
- Pages
- 4
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 1
- Number
- 1
- Start Page
- 59
- End Page
- 62
- ISSN
- 1738-8090
- Abstract
- We have investigated interface dipole energies and the energy alignment between 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino] biphenyl (alpha-NPD) and bare indium tin oxide (ITO)/O-2-plasma-treated ITO (O-2-ITO) anodes using synchrotron radiation photoemission spectroscopy (SRPES). SRPES spectra showed that the work function of O-2-ITO is 0.6 eV higher than that of ITO. After deposition of alpha-NPD, the dipole energy and amount of band bending were calculated to be - 0.1 and - 0.5 eV for ITO and - 0.3 and - 0.3 for O-2-ITO, respectively. It is thereupon concluded that the work function of O-2-ITO is still 0.6 eV higher than that of ITO, resulting in a decrease of the turn-on voltage via reduction of the hole injection barrier.
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