Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET 구조를 위한ZrO2 Buffer Layer의 영향

Abstract

We investigated the structural and electrical properties of BLT films grown on Si covered with ZrO2 buffer layer. The BLT thin film and ZrO2 buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the ZrO2 layer. AES and TEM show no interdiffusion and reaction that suppressed using the ZrO2 film as a buffer layer. The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the ZrO2 layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using ZrO2 buffer layer. The results show that the ZrO2 buffer layers are prospective candidates for applications in MFIS-FET memory devices.