Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

화학-기계적 연마 공정의 물질제거 메커니즘 해석Part I: 연성 통합 모델링An Analysis on the Material Removal Mechanism of Chemical-Mechanical Polishing Process Part I: Coupled Integrated Material Removal Modeling

Authors
석종원석종혁오승희
Issue Date
2007
Publisher
한국반도체디스플레이기술학회
Keywords
Chemical-Mechanical Polishing; Thermal-Chemical-Mechanical Modeling; Contact Mechanics; Arrhenius Equation
Citation
반도체디스플레이기술학회지, v.6, no.2, pp 35 - 40
Pages
6
Journal Title
반도체디스플레이기술학회지
Volume
6
Number
2
Start Page
35
End Page
40
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/30017
ISSN
1738-2270
Abstract
An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > School of Mechanical Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Seok, Jong Won photo

Seok, Jong Won
공과대학 (기계공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE