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화학-기계적 연마 공정의 물질제거 메커니즘 해석Part II: 동적 시뮬레이션An Analysis on the Material Removal Mechanism of Chemical-Mechanical Polishing Process Part II: Dynamic Simulation
- Issue Date
- 2007
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- Chemical-Mechanical Polishing; Thermal-Chemical-Mechanical Modeling; Dynamic Simulation; Non-Prestonian Behavior
- Citation
- 반도체디스플레이기술학회지, v.6, no.3, pp 1 - 6
- Pages
- 6
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 6
- Number
- 3
- Start Page
- 1
- End Page
- 6
- ISSN
- 1738-2270
- Abstract
- The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.
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