Eu 첨가에 따른 PZT 박막의 강유전 특성
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 손영훈 | - |
dc.contributor.author | 김경태 | - |
dc.contributor.author | 김동표 | - |
dc.contributor.author | 김창일 | - |
dc.contributor.author | 이병기 | - |
dc.date.available | 2019-08-07T04:57:15Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32166 | - |
dc.description.abstract | Eu-doped lead zirconate titanate(Pb1.1(Zr0.6Ti0.4)O3; PZT) thin films on the Pt/Ti/SiO2/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film. | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | Eu 첨가에 따른 PZT 박막의 강유전 특성 | - |
dc.title.alternative | Ferroelectirc Properties of Eu-doped PZT Thin Films | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.16, no.7 | - |
dc.identifier.kciid | ART000892646 | - |
dc.description.isOpenAccess | N | - |
dc.citation.number | 7 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 16 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | ferroelectrics | - |
dc.subject.keywordAuthor | PZT thin film | - |
dc.subject.keywordAuthor | dielectric properties | - |
dc.subject.keywordAuthor | sol-gel | - |
dc.subject.keywordAuthor | fatigue | - |
dc.description.journalRegisteredClass | kci | - |
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