Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jinbae | - |
dc.contributor.author | Park, Wonseo | - |
dc.contributor.author | Lee, Je-Ho | - |
dc.contributor.author | Seong, Maeng-Je | - |
dc.date.available | 2019-08-13T04:57:14Z | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32834 | - |
dc.description.abstract | High quality gallium sulfide II (GaS) and gallium sulfide III (Ga2S3) thin films on SiO2/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6528/ab284c | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.30, no.38 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000474692800001 | - |
dc.identifier.scopusid | 2-s2.0-85069798315 | - |
dc.citation.number | 38 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 30 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | gallium sulfide | - |
dc.subject.keywordAuthor | physical vapor deposition | - |
dc.subject.keywordAuthor | Raman | - |
dc.subject.keywordAuthor | XRD | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | SEM | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.