Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor
- Authors
- Kim, Jinbae; Park, Wonseo; Lee, Je-Ho; Seong, Maeng-Je
- Issue Date
- Sep-2019
- Publisher
- IOP PUBLISHING LTD
- Keywords
- gallium sulfide; physical vapor deposition; Raman; XRD; XPS; SEM
- Citation
- NANOTECHNOLOGY, v.30, no.38
- Journal Title
- NANOTECHNOLOGY
- Volume
- 30
- Number
- 38
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32834
- DOI
- 10.1088/1361-6528/ab284c
- ISSN
- 0957-4484
1361-6528
- Abstract
- High quality gallium sulfide II (GaS) and gallium sulfide III (Ga2S3) thin films on SiO2/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32834)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.