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Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor

Authors
Kim, JinbaePark, WonseoLee, Je-HoSeong, Maeng-Je
Issue Date
Sep-2019
Publisher
IOP PUBLISHING LTD
Keywords
gallium sulfide; physical vapor deposition; Raman; XRD; XPS; SEM
Citation
NANOTECHNOLOGY, v.30, no.38
Journal Title
NANOTECHNOLOGY
Volume
30
Number
38
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32834
DOI
10.1088/1361-6528/ab284c
ISSN
0957-4484
1361-6528
Abstract
High quality gallium sulfide II (GaS) and gallium sulfide III (Ga2S3) thin films on SiO2/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.
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Seong, Maeng-Je
자연과학대학 (물리학과)
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