Radiation-Tolerant p-Type SnO Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Jeong, Ha-Yun | - |
dc.contributor.author | Kwon, Soo-Hun | - |
dc.contributor.author | Joo, Hyo-Jun | - |
dc.contributor.author | Shin, Min-Gyu | - |
dc.contributor.author | Jeong, Hwan-Seok | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-08-13T04:58:03Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32851 | - |
dc.description.abstract | This present work investigated the effects of proton-beam irradiation on SnO-based p-type oxide thin-film transistors (TFTs) for the first time. The experiments were performed using a 5-MeV proton beam with doses ranging from 10(12) to 10(14) p . cm(-2). The experimental results showed that the transfer curves of the p-type SnO TFT rarely changed following the proton irradiation at every irradiation condition, indicating that the p-type SnO TFT could be potentially useful in implementing complementary-logic-based oxide TFT circuits operating in harsh environments. The insensitivity of current conduction paths to SnO lattice disorder was considered as a possible mechanism for the observed radiation tolerance of the p-type SnO TFTs. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Radiation-Tolerant p-Type SnO Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2019.2914252 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp 1124 - 1127 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000473441400024 | - |
dc.identifier.scopusid | 2-s2.0-85068170185 | - |
dc.citation.endPage | 1127 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1124 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 40 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | SnO | - |
dc.subject.keywordAuthor | p-type oxide thin-film transistor | - |
dc.subject.keywordAuthor | proton irradiation | - |
dc.subject.keywordAuthor | radiation tolerance | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | IRRADIATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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