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Tuning the energy level of TAPC: crystal structure and photophysical and electrochemical properties of 4,4'-(cyclohexane-1,1-diyl) bis[N,N-bis(4-methoxyphenyl)aniline]

Authors
Lee, SunheeKwak, SoyoungLee, KeumheeKim, Byung GiKim, MinseongWang, Dong HwanHan, Won-Sik
Issue Date
Jul-2019
Publisher
INT UNION CRYSTALLOGRAPHY
Keywords
energy level tuning; hydrogenbonding interaction; steady-state photophysics; crystal structure; hole-transporting material; DFT calculations
Citation
ACTA CRYSTALLOGRAPHICA SECTION C-STRUCTURAL CHEMISTRY, v.75, no.7, pp 919 - 926
Pages
8
Journal Title
ACTA CRYSTALLOGRAPHICA SECTION C-STRUCTURAL CHEMISTRY
Volume
75
Number
7
Start Page
919
End Page
926
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32853
DOI
10.1107/S2053229619007101
ISSN
2053-2296
2053-2296
Abstract
The energy level of a hole-transporting material (HTM) in organic electronics, such as organic light-emitting diodes (OLEDs) and perovskite solar cells (PSCs), is important for device efficiency. In this regard, we prepared4,4'-(cyclohexane-1,1-diyl)bis[N,N-bis(4-methoxyphenyl)aniline] (TAPC-OMe), C46H46N2O4, to tune the energy level of 4,40-(cyclohexane-1,1-diyl) bis[N, Nbis(4-methylphenyl) aniline] (TAPC), which is a well-known HTM commonly used in OLED applications. A systematic characterization of TAPC-OMe, including H-1 and C-13 NMR, elemental analysis, UV-Vis absorption, fluorescence emission, density functional theory (DFT) calculations and single-crystal X-ray diffraction, was performed. TAPC-OMe crystallized in the triclinic space group P (1) over bar, with two molecules in the asymmetric unit. The dihedral angles between the central amine triangular planes and those of the phenyl groups varied from 26.56 (9) to 60.34 (8)degrees due to the steric hindrance of the central cyclohexyl ring. This arrangement might be induced by weak hydrogen bonds and C-H center dot center dot center dot pi (Ph) interactions in the extended structure. The emission maxima of TAPC-OMe showed a significant bathochomic shift compared to that of TAPC. A strong dependency of the oxidation potentials on the nature of the electron-donating ability of substituents was confirmed by comparing oxidation potentials with known Hammett parameters (sigma).
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