The Dry Etching Properties of ZnO Thin Film in Cl2/BCl3/Ar Plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 우종창 | - |
dc.contributor.author | 김창일 | - |
dc.date.available | 2019-08-19T06:03:27Z | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.issn | 2092-7592 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/34299 | - |
dc.description.abstract | The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a Cl2/BCl3/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the Cl2/BCl3/Ar plasma, a gas mixture of Cl2(3 sccm)/BCl3(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/SiO2. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with Cl2/BCl3/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching. | - |
dc.format.extent | 4 | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | The Dry Etching Properties of ZnO Thin Film in Cl2/BCl3/Ar Plasma | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.11, no.3, pp 116 - 119 | - |
dc.identifier.kciid | ART001451874 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 119 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 116 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 11 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Plasma etch | - |
dc.subject.keywordAuthor | Selectivity | - |
dc.subject.keywordAuthor | Etch rate | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.