Dependence of the etching characteristics of SBT thin films on the amount of BCl 3 added to a Cl 3/Ar inductively coupled plasma
DC Field | Value | Language |
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dc.contributor.author | Yeo, Ji-Won | - |
dc.contributor.author | Kim, Dong-Pyo | - |
dc.contributor.author | Kim, Chang-Il | - |
dc.date.available | 2019-08-23T03:02:49Z | - |
dc.date.issued | 2004-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/35857 | - |
dc.description.abstract | The etch characteristics of SBT films were investigated using Cl-2/Ar inductively coupled plasma with BCl3 added. A 10% addition of BCl3 into the Cl-2/Ar plasma caused an increase in the etch rate, but an addition of over 20% BCl3 caused a decrease in the etch rate. As the rf power and the dc bias were increased, the etch rate of SBT increased. At 800 W and -200 V, we obtained the maximum etch rate of 764 Angstrom/min. The etch rate change in SBT was studied by using a combination of optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS). In the OES analysis, the volume densities of Cl radicals and BCl molecules were monitored. In the XPS analysis, SrCl and B-O bonds were detected on the surface of SBT treated with a BCl3/Cl-2/Ar plasma. The SrCl layer on the surface prohibits any possible chemical reaction or reduction of physical sputtering by positive ions. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국물리학회 | - |
dc.title | Dependence of the etching characteristics of SBT thin films on the amount of BCl 3 added to a Cl 3/Ar inductively coupled plasma | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.44, no.5, pp 1092 - 1096 | - |
dc.identifier.kciid | ART001198325 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000221461000014 | - |
dc.identifier.scopusid | 2-s2.0-2942672475 | - |
dc.citation.endPage | 1096 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1092 | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 44 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | SBT | - |
dc.subject.keywordAuthor | ICP | - |
dc.subject.keywordAuthor | OES | - |
dc.subject.keywordAuthor | XPS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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