Cl2/BCl3/Ar 플라즈마에서 반응성 이온들에 의해 식각된 ZnO 박막 표면 연구

Abstract

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in Cl2/BCl3/Ar plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for Cl2/BCl3/Ar=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in Cl2/BCl3/Ar plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in Cl2/BCl3/Ar plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.