Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport
- Authors
- Lee, Han Sol; Park, Sam; Lim, June Yeong; Yu, Sanghyuck; Ahn, Jongtae; Hwang, Do Kyung; Sim, Yumin; Lee, Je-Ho; Seong, Maeng-Je; Oh, Sehoon; Choi, Hyoung Joon; Im, Seongil
- Issue Date
- Sep-2019
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- band-like transport; H-doping; n-type; transition metal dichalcogenides; variable range hopping (VRH) transport
- Citation
- SMALL, v.15, no.38
- Journal Title
- SMALL
- Volume
- 15
- Number
- 38
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/36374
- DOI
- 10.1002/smll.201901793
- ISSN
- 1613-6810
1613-6829
- Abstract
- Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.
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