n-Channel polymer thin film transistors with long-term air-stability and durability and their use in complementary inverters
- Authors
- Briseno, Alejandro L.; Kim, Felix Sunjoo; Babel, Amit; Xia, Younan; Jenekhe, Samson A.
- Issue Date
- Nov-2011
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.21, no.41, pp 16461 - 16466
- Pages
- 6
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 21
- Number
- 41
- Start Page
- 16461
- End Page
- 16466
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/36909
- DOI
- 10.1039/c1jm12953h
- ISSN
- 0959-9428
1364-5501
- Abstract
- We report an investigation of the stability and durability of p- and n-channel polymer thin film transistors in air over a 4-year period. All-polymer p/n complementary inverters fabricated from an n-channel poly(benzobisimidazobenzophenanthroline) (BBL) transistor and a p-channel poly(3-hexylthiophene) (P3HT) transistor showed excellent switching characteristics and a large voltage gain. The electrical parameters (electron mobility, on/off current ratio, and threshold voltage) of the n-channel BBL transistors in air were found to be constant over the 4 years. The performance of the p-channel P3HT transistors deteriorated dramatically after only 2 weeks in air. The excellent stability/durability of the BBL transistors in air is explained by the closely-packed crystalline morphology which creates a kinetic barrier against diffusion of extrinsic molecules and its high electron affinity that provides energetic stability against chemical/electrochemical reactions. The results demonstrate the longest air-stability and durability of non-encapsulated organic electronic devices to date while offering insights for the design of more environmentally rugged organic semiconductors.
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