Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Gamma-ray irradiation effects on the electrical properties of organic field-effect transistors
- Issue Date
- Jul-2019
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- organic field-effect transistor; gamma-ray irradiation; radiation effect; organic semiconductor; P3HT; PCBM
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.687, no.1, pp 1 - 6
- Pages
- 6
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 687
- Number
- 1
- Start Page
- 1
- End Page
- 6
- ISSN
- 1542-1406
1563-5287
- Abstract
- We investigated the changes in the organic transistor characteristics of poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) thin films upon high-energy gamma-ray irradiation. Devices based on both organic semiconductors showed a lower field-effect mobility and electrical current levels after gamma-ray irradiation. The threshold voltage of P3HT transistors shifted negative, while that of PCBM-based devices shifted positive. These changes in electrical performance of the devices can be utilized as a gamma-ray sensing elements.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.