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Characterization of Electroless-Deposited Ternary M1M2-R (M1=Co, Ni, M2=W, Mo, R = P, B) Nano Thin Film for Optical-Sensor Interconnects
- Issue Date
- Nov-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- CoWP; Electroless Deposition; NiWP; PdCl2; Sensor
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.9, no.11, pp 2026 - 2031
- Pages
- 6
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 9
- Number
- 11
- Start Page
- 2026
- End Page
- 2031
- ISSN
- 1947-2935
1947-2943
- Abstract
- We evaluated the selective metal capping layer in a complementary metal-oxide semiconductor image sensor using electroless-deposited CoWP and NiWP films. We investigated the correlation integration issues and the selectivity of the capping layer formed by the electroless plating process. M1M2-R (M1 = Co, Ni, M2 = W, Mo, R = P, B) was selectively deposited on Cu wiring through electroless plating after chemical mechanical polishing via the Cu damascene method. The PdCl2/HCI-based electroless-deposited CoWP exhibited very good deposition characteristics without residue compared to a non-chloride Pd-activated CoWP film.
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