Impact of Al-Interlayer Processing on the Properties of 4H-SiC Schottky Diodes
DC Field | Value | Language |
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dc.contributor.author | Kim, So-Mang | - |
dc.contributor.author | Moon, Kyoung-Sook | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.date.available | 2019-03-08T07:38:24Z | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/3755 | - |
dc.description.abstract | We report on the improvement in device performance of SiC Schottky barrier diodes (SBDs) by forming aluminium carbide (Al4C3) at metal-SiC interface. Al interlayer was annealed at 700 and 1000 degrees C and the bonding of Al-C was detected by measurement of XPS. The current density and leakage current of device with Al4C3 interlayer was similar to 1.6 A/cm(2) at 5 V and leakage current of less than similar to 1.2x10(-9) at -5 V, respectively. The experimental results demonstrate that the device with Al4C3 has higher Schottky barrier height and yields on-off ratio of 2.4x10(8), which is 12 times higher than that of device without Al4C3. The results suggest that the bonding of Al-C may be responsible for the decrease of leakage current by increase of Schottky barrier height. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Impact of Al-Interlayer Processing on the Properties of 4H-SiC Schottky Diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2017.2177 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.12, no.11, pp 1177 - 1180 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000427580200001 | - |
dc.identifier.scopusid | 2-s2.0-85041605224 | - |
dc.citation.endPage | 1180 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1177 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Silicon Carbide | - |
dc.subject.keywordAuthor | Schottky Diodes | - |
dc.subject.keywordAuthor | Aluminium Carbide | - |
dc.subject.keywordAuthor | Electrical Properties | - |
dc.subject.keywordAuthor | Post Annealing | - |
dc.subject.keywordPlus | COMPOSITE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | RECTIFIERS | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | DIAMOND | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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