Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping
DC Field | Value | Language |
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dc.contributor.author | Heo J.S. | - |
dc.contributor.author | Jeon S.-P. | - |
dc.contributor.author | Kim I. | - |
dc.contributor.author | Lee W. | - |
dc.contributor.author | Kim Y.-H. | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2020-02-25T01:40:31Z | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/37574 | - |
dc.description.abstract | The fabrication of high-performance metal oxide thin-film transistors (TFTs) using a low-temperature solution process may facilitate the realization of ultraflexible and wearable electronic devices. However, the development of highly stable oxide gate dielectrics at a low temperature has been a challenging issue since a considerable amount of residual impurities and defective bonding states is present in low-temperature-processed gate dielectrics causing a large counterclockwise hysteresis and a significant instability. Here, we report a new approach to effectively remove the residual impurities and suppress the relevant dipole disorder in a low-temperature-processed (180 °C) AlOxgate dielectric layer by magnesium (Mg) doping. Mg is well known as a promising material for suppression of oxygen vacancy defects and improvement of operational stability due to a high oxygen vacancy formation energy (Evo= 9.8 eV) and a low standard reduction potential (E0 =-2.38 V). Therefore, with an adequate control of Mg concentration in metal oxide (MO) films, oxygen-related defects could be easily suppressed without additional treatments and then stable metal-oxygen-metal (M-O-M) network formation could be achieved, causing excellent operational stability. By optimal Mg doping (10%) in the InOxchannel layer, Mg:InOxTFTs exhibited negligible clockwise hysteresis and a field-effect mobility of >4 cm2 V-1 s-1. Furthermore, the electric characteristics of the low-temperature-processed AlOxgate dielectric with high impurities were improved by Mg diffusion originating in Mg doping, resulting in stable threshold voltage shift in the bias stability test. Copyright © 2019 American Chemical Society. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.9b17642 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.11, no.51, pp 48054 - 48061 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000505626900039 | - |
dc.identifier.scopusid | 2-s2.0-85076802965 | - |
dc.citation.endPage | 48061 | - |
dc.citation.number | 51 | - |
dc.citation.startPage | 48054 | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 11 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | magnesium (Mg) doping | - |
dc.subject.keywordAuthor | metal oxide semiconductor and dielectric | - |
dc.subject.keywordAuthor | Mg diffusion | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | Defects | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.subject.keywordPlus | Hysteresis | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | MOS devices | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Oxygen vacancies | - |
dc.subject.keywordPlus | Removal | - |
dc.subject.keywordPlus | Semiconductor doping | - |
dc.subject.keywordPlus | Stability | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Electric characteristics | - |
dc.subject.keywordPlus | Low temperature solutions | - |
dc.subject.keywordPlus | Metal oxide semiconductor | - |
dc.subject.keywordPlus | Metal oxide thin-film transistors | - |
dc.subject.keywordPlus | Solution process | - |
dc.subject.keywordPlus | Standard reduction potentials | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Threshold voltage shifts | - |
dc.subject.keywordPlus | Magnesium compounds | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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