Pulsed Power Modulator With Active Pull-Down Using Diode Reverse Recovery Time
- Authors
- Park, Su-Mi; Ryoo, Hong-Je
- Issue Date
- Mar-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Resistors; Switches; Switching circuits; Modulation; Plasmas; Inductors; Capacitors; Plasma source ion implantation (PSII); pull-down circuit; pulsed power modulator; reverse recovery
- Citation
- IEEE TRANSACTIONS ON POWER ELECTRONICS, v.35, no.3, pp 2943 - 2949
- Pages
- 7
- Journal Title
- IEEE TRANSACTIONS ON POWER ELECTRONICS
- Volume
- 35
- Number
- 3
- Start Page
- 2943
- End Page
- 2949
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/38162
- DOI
- 10.1109/TPEL.2019.2924586
- ISSN
- 0885-8993
1941-0107
- Abstract
- This paper presents a pulsed power modulator with a new structure that utilizes the reverse recovery characteristics of diodes to achieve an effective pull-down circuit configuration. The proposed configuration for active pull-down applicable to negative pulsed power applications with a high-voltage direct switching method is implemented by adding a diode to the pulse discharging path of the modulator, instead of using a pull-down resistor. The diode is forward-biased while an output pulse voltage is applied to the load. When the pulse voltage applied to the load is removed, the residual energy in the load is quickly discharged through the reverse recovery path of the diode so that the pull-down function of the pulsed power supply system is efficiently performed. The operating principle of the proposed system is described, and each operating mode is analyzed in detail. In addition, the feasibility of the proposed system configuration is examined through various simulation results. Finally, it is proven that the proposed system can be used effectively in pulsed power application fields through a practical experiment in plasma source ion implantation applications.
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Collections - College of Engineering > School of Energy System Engineering > 1. Journal Articles
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