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Pulsed Power Modulator With Active Pull-Down Using Diode Reverse Recovery Time

Authors
Park, Su-MiRyoo, Hong-Je
Issue Date
Mar-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Resistors; Switches; Switching circuits; Modulation; Plasmas; Inductors; Capacitors; Plasma source ion implantation (PSII); pull-down circuit; pulsed power modulator; reverse recovery
Citation
IEEE TRANSACTIONS ON POWER ELECTRONICS, v.35, no.3, pp 2943 - 2949
Pages
7
Journal Title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume
35
Number
3
Start Page
2943
End Page
2949
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/38162
DOI
10.1109/TPEL.2019.2924586
ISSN
0885-8993
1941-0107
Abstract
This paper presents a pulsed power modulator with a new structure that utilizes the reverse recovery characteristics of diodes to achieve an effective pull-down circuit configuration. The proposed configuration for active pull-down applicable to negative pulsed power applications with a high-voltage direct switching method is implemented by adding a diode to the pulse discharging path of the modulator, instead of using a pull-down resistor. The diode is forward-biased while an output pulse voltage is applied to the load. When the pulse voltage applied to the load is removed, the residual energy in the load is quickly discharged through the reverse recovery path of the diode so that the pull-down function of the pulsed power supply system is efficiently performed. The operating principle of the proposed system is described, and each operating mode is analyzed in detail. In addition, the feasibility of the proposed system configuration is examined through various simulation results. Finally, it is proven that the proposed system can be used effectively in pulsed power application fields through a practical experiment in plasma source ion implantation applications.
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Ryoo, Hong Je
공과대학 (에너지시스템 공학부)
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