Physical Patterning Performance in the Modified Layer Extraction Rule with an Image Sensor Device

Abstract

In this work we discuss the modification of the layer extraction rule (LER) for the elimination of the pattern on shallow trench isolation (STI). The differences in the physical pattering performance between the original LER and the modified LER are investigated with an image sensor device. The minimum design rule of Lightly Doped Drain (LDD) and Source/Drain implant in photolithography after the gate process is reduced by using a dried ArF (193 nm) source by EUVL (Extreme Ultra Violet Lithography). EUVL belongs to the NGL (Next Generation Lithography). By reducing the critical dimension, a sub-topology which is more complicated was fabricated. Depending on the surface status or treatment it leads to a collapse of the long line patterns or bridges in the space pattern.