Fabrication of Highly Ordered Silicon Nanowires by Metal Assisted Chemical Etching Combined with a Nanoimprinting Process
- Authors
- Ju, Jonghyun; Huang, Xiaolu; Kim, Seok-Min; Yeom, Junghoon
- Issue Date
- Oct-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon Nanowires; Metal Enhanced Chemical Etching Nanoimprinting
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.10, pp 7771 - 7774
- Pages
- 4
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 10
- Start Page
- 7771
- End Page
- 7774
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/3829
- DOI
- 10.1166/jnn.2017.14837
- ISSN
- 1533-4880
1533-4899
- Abstract
- Highly ordered silicon nanowires with a high aspect ratio were fabricated by a metal assisted chemical etching (MACE) process combined with a nanoimprinting-assisted metal patterning method. A polymethylmethacrylate (PMMA) layer was coated on a silicon wafer as a sacrificial lift-off layer, and the highly ordered nanodot structures were ultraviolet (UV) nanoimprinted on the PMMA layer. The Au nanomesh arrayed catalyst layer for the MACE process was fabricated on a silicon wafer using a lift-off method with a UV imprinted nanodot barrier. The etching rate of the MACE process was analyzed for accurate control of the length of the silicon nanowires.
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Collections - College of Engineering > School of Mechanical Engineering > 1. Journal Articles
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