Pressure dependence of band gaps in the quaternary semiconductors Cu(In,Ga)Se-2
- Authors
- Choi, IH; Yu, PY
- Issue Date
- Jan-1999
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.211, no.1, pp 51 - 55
- Pages
- 5
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH
- Volume
- 211
- Number
- 1
- Start Page
- 51
- End Page
- 55
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/39273
- DOI
- 10.1002/(SICI)1521-3951(199901)211:1<51::AID-PSSB51>3.0.CO;2-U
- ISSN
- 0370-1972
1521-3951
- Abstract
- We report the photoluminescence and absorption spectra of a series of quaternary chalcopyrite alloys with the formula: CuIn1-xGaxSe2 where x varies between 0 and 1 in steps of 0.25. Using a diamond anvil cell we have studied their band gaps and impurity emission peak energies as a function of pressure. We found that while the band gap of CuIn1-xGaxSe2 varies nonlinearly with x the pressure coefficient (alpha) varies linearly with x at a rather large rate of d alpha/dx = 18.6 meV/GPa. We interpret our results in terms of recent theoretical calculations which have been proposed to explain the large difference in alpha between CuGaSe2 and CuInSe2.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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