Uncertainty Analysis of In- and Cross-Plane Thermal Conductivities of p-Bi0.5Sb1.5Te3 Thin Films by Changing Heater Widths in the Four-Point-Probe 3-Omega Method
DC Field | Value | Language |
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dc.contributor.author | Lee, Won-Yong | - |
dc.contributor.author | Ahn, Jay-Young | - |
dc.contributor.author | Umar, Ahmad | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.available | 2019-03-08T07:58:29Z | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.issn | 1555-1318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4057 | - |
dc.description.abstract | Reduction of thermal conductivity is one of the most effective strategies for increasing the figure of merit (ZT) of thin-film thermoelectric (TE) devices. Recently, thin-film structures using Bi-Sb-Te TE materials attracted significant attention because of their low thermal conductivity and anisotropic thermal properties. The four-point-probe three omega (3-omega) method is the most widely used technique to measure the thermal conductivity of various dimensional materials, including 1D nanostructures, 2D-thin films, and 3D-bulk materials, because it provides a simple measurement setup and high accuracy (less than similar to 10%) for the measurement. In addition, it was confirmed that both cross-plane and in-plane thermal conductivities of thin films can be measured by altering the width of the heater on the films and by using a proper substrate underneath the films in the 3-omega method. Here, we first report an uncertainty analysis of both the cross-plane and in-plane thermal conductivities of 500-nm-thick p-Bi0.5Sb1.5Te3 (p-BST) thin films, which were prepared on a SiO2/Si substrate and measured by the four-point-probe 3-omega method at room temperature, by varying the width of the heater on the substrates. From the uncertainty calculations, reasonable in-and cross-plane thermal conductivities of p-BST thin films in the 3-omega method were estimated with lower measurement error. The results suggest that the heater widths are strongly related to both in- and cross-plane thermal conductivities in the measurement. The corrected cross-plane and in-plane thermal conductivities of the 500-nm-thick thin films were similar to 0.43 +/- 0.02 W m(-1) K-1 and similar to 0.61 +/- 0.05 W m(-1) K-1, respectively, at room temperature. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Uncertainty Analysis of In- and Cross-Plane Thermal Conductivities of p-Bi0.5Sb1.5Te3 Thin Films by Changing Heater Widths in the Four-Point-Probe 3-Omega Method | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2017.2143 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.12, no.9, pp 986 - 991 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000419955700021 | - |
dc.identifier.scopusid | 2-s2.0-85037126398 | - |
dc.citation.endPage | 991 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 986 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Bismuth Antimony Telluride (Bi0.5Sb1.5Te3) | - |
dc.subject.keywordAuthor | 3-omega Technique | - |
dc.subject.keywordAuthor | Thermal Conductivity | - |
dc.subject.keywordAuthor | Uncertainty Analysis | - |
dc.subject.keywordPlus | THERMOELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | TRANSIENT THERMOREFLECTANCE | - |
dc.subject.keywordPlus | THEORETICAL-ANALYSIS | - |
dc.subject.keywordPlus | METAL-FILMS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | BI0.5SB1.5TE3 | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordPlus | POWER | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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