Enhanced dielectric properties of Ag-doped CCTO ceramics for energy storage devices

Abstract

Ag-doped CaCu3Ti4O12 powders were subjected to high-energy milling to produce nano-sized particles, and the resulting ceramics were analyzed in terms of the dielectric properties and sintering temperature. Ag dopant was added to CaCu3Ti4O12 powders to reduce the sintering temperature, and the Ag-doped CaCu3Ti4O12 ceramics were sintered at temperatures from 975 to 1125 degrees C to determine the optimum sintering temperature according to the various dopant ratios. The relative dielectric permittivity at a frequency of 1 kHz of the 2 mol% Ag-doped CaCu3Ti4O12 ceramics was higher than that of undoped CaCu3Ti4O12 ceramics. The addition of Ag to the CaCu3Ti4O12 ceramics was observed to lower the sintering temperature from 1125 to 1075 degrees C. Moreover, the 2 mol% Ag-doped CaCu3Ti4O12 ceramics prepared from nano-size particles exhibited an improved relative dielectric permittivity. These results suggest that Ag-doping and reducing the particle size of the CaCu3Ti4O12 ceramics decreases their sintering temperature and improves their dielectric properties.