Boosting the Conversion Efficiency Over 20% in MAPbI(3) Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector
- Authors
- Parida, Bhaskar; Yoon, Saemon; Ryu, Jun; Hayase, Shuzi; Jeong, Sang Mun; Kang, Dong-Won
- Issue Date
- 20-May-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- aluminum; nickel oxide; perovskite; solar cells; hole transport layer
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.20, pp 22958 - 22970
- Pages
- 13
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 20
- Start Page
- 22958
- End Page
- 22970
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/41785
- DOI
- 10.1021/acsami.0c04618
- ISSN
- 1944-8244
1944-8252
- Abstract
- Recently, nickel oxide (NiOx) thin films have been used as an efficient and robust hole transport layer (HTL) in inverted planar perovskite solar cells (IP-PSCs) to replace costly and unstable organic transport materials. However, the power conversion efficiency (PCE) of most IP-PSCs using NiOx HTLs is rather limited below 20% due to insufficient electronic conductivity of the NiOx. In this work, solution-processed Al-doped NiOx (ANO) films are suggested as HTLs for low-cost and stable IP-PSCs. The electrical conductivity of the NiOx film is significantly enhanced by Al doping, which effectively reduces the nonradiative recombination losses at the HTL-perovskite interfaces and boosts hole extraction/transportation. The device with undoped NiOx shows the best PCE of 16.56%, whereas ANO HTL (5% doping) contributes to achieving a PCE of 20.84%, which outperforms other CH3NH3PbI3 IP-PSCs with NiOx-based HTLs reported to date. Moreover, a reliability test (1728 h storage) shows that the performance stability is enhanced by approximately 11% by employing ANO HTLs. This investigation into ANO HTLs provides a new guideline for the further development of highly efficient and reliable IP-PSCs using low-cost and robust metal oxide HTLs.
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