Spin-Coated In-Doped ZnO Nanorods for Transparent Conducting Oxide Applications
DC Field | Value | Language |
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dc.contributor.author | Kim, Jinhwan | - |
dc.contributor.author | Lee, Gun-Hyun | - |
dc.contributor.author | Yun, Gun-Ho | - |
dc.contributor.author | Park, Bae-Won | - |
dc.contributor.author | Jeong, Ji-Yun | - |
dc.contributor.author | Sang-Choi | - |
dc.contributor.author | Kim, Sung-Jin | - |
dc.contributor.author | Chang, Seung Wook | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.date.available | 2019-03-08T08:37:08Z | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4238 | - |
dc.description.abstract | In this paper, we have prepared different compositions and thicknesses of In-doped ZnO thin films using the spin-coating process. To determine the optimum electrical conductance and transmittance, 0-2.5 mol% In contents were doped onto ZnO thin films to realize transparent conducting-oxide applications. 1.5 mol% In-doped ZnO thin films showed the highest electrical conductance from among the other specimens considered, and displayed good optical transmittance properties. From these results, different thicknesses of 1.5 mol% In-doped ZnO thin films were analyzed for application to transparent conducting oxides. As the thickness of 1.5 mol% In-doped ZnO thin films increased, the optical transmittance was degraded, while the sheet resistance improved, and vice versa. In addition, as increasing the thickness of In-doped ZnO thin films, nanorods were developed. By developing these nanorods, the electrical conductivities improved significantly. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Spin-Coated In-Doped ZnO Nanorods for Transparent Conducting Oxide Applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/sam.2017.2974 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.9, no.7, pp 1193 - 1196 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000400573000019 | - |
dc.identifier.scopusid | 2-s2.0-85019259990 | - |
dc.citation.endPage | 1196 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1193 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 9 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | In-Doped ZnO | - |
dc.subject.keywordAuthor | Transparent Conducting Oxide | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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