Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors
DC Field | Value | Language |
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dc.contributor.author | Shin, Jae Cheol | - |
dc.contributor.author | Kwon, Sung Min | - |
dc.contributor.author | Kang, Jingu | - |
dc.contributor.author | Jeon, Seong Pil | - |
dc.contributor.author | Heo, Jae-Sang | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Cho, Sung Woon | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2020-08-03T06:23:54Z | - |
dc.date.issued | 2020-06-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/42701 | - |
dc.description.abstract | As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO2 (c-TiO2) films required high-temperature crystallization conditions (>= 500-600 degrees C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO2 films, enabling high-quality c-TiO2 films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO2) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO2 to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (>= 300 degrees C) crystallization of the solution-processed a-TiO2 films and the fabrication of high-performance solution-processed c-TiO2 thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability. | - |
dc.format.extent | 11 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.0c04401 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.22, pp 25000 - 25010 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000538515700051 | - |
dc.identifier.scopusid | 2-s2.0-85086481394 | - |
dc.citation.endPage | 25010 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 25000 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | low-temperature crystallization | - |
dc.subject.keywordAuthor | catalytic metals-accelerated crystallization | - |
dc.subject.keywordAuthor | solution-processed metal oxide | - |
dc.subject.keywordAuthor | titanium oxide | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TITANIUM-DIOXIDE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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