The growth of HVPE α-Ga2O3 crystals and its solar-blind UV photodetector applications
DC Field | Value | Language |
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dc.contributor.author | Lee, Moonsang | - |
dc.contributor.author | Yang, Mino | - |
dc.contributor.author | Lee, Hae-Yong | - |
dc.contributor.author | Lee, Hyun Uk | - |
dc.contributor.author | Lee, Hyunhwa | - |
dc.contributor.author | Son, Hyungbin | - |
dc.contributor.author | Kim, Un Jeong | - |
dc.date.accessioned | 2021-05-20T02:40:21Z | - |
dc.date.available | 2021-05-20T02:40:21Z | - |
dc.date.issued | 2021-03 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.issn | 1873-4081 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/43951 | - |
dc.description.abstract | While Ga2O3 crystals are considered as the next generation optoelectronic materials, the exploration of HVPE α-Ga2O3 crystals and their use as solar-blind UV photodetector are still insufficient. In this paper, we investigated the structural characterization of HVPE α-Ga2O3 materials and their properties as solar-blind photodetector. HVPE α-Ga2O3 exhibited excellent structural properties with relatively good crystallinity, and smooth surface morphology, without any complicated process. Raman investigations confirmed the existence of slight compressive strain in the as-grown HVPE α-Ga2O3. UV–visible spectrophotometry proved that HVPE α-Ga2O3 had an optical bandgap of 5.15 eV, evidencing the suitability of this material for application as solar-blind photodetector. Furthermore, the photodetector synthesized using HVPE α-Ga2O3 showed excellent photo-response characteristics. We believe that this study will support further development of functional oxide semiconductor materials and opto-electronic devices. © 2020 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier Ltd | - |
dc.title | The growth of HVPE α-Ga2O3 crystals and its solar-blind UV photodetector applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.mssp.2020.105565 | - |
dc.identifier.bibliographicCitation | Materials Science in Semiconductor Processing, v.123 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000604247300006 | - |
dc.identifier.scopusid | 2-s2.0-85096186515 | - |
dc.citation.title | Materials Science in Semiconductor Processing | - |
dc.citation.volume | 123 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Hetero-epitaxy | - |
dc.subject.keywordAuthor | Hydride vapor epitaxy | - |
dc.subject.keywordAuthor | Solar-blind photodetector | - |
dc.subject.keywordAuthor | α-Ga2O3 | - |
dc.subject.keywordPlus | Crystallinity | - |
dc.subject.keywordPlus | Crystals | - |
dc.subject.keywordPlus | Morphology | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Photodetectors | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Semiconductor devices | - |
dc.subject.keywordPlus | Surface morphology | - |
dc.subject.keywordPlus | Compressive strain | - |
dc.subject.keywordPlus | Opto-electronic materials | - |
dc.subject.keywordPlus | Photoresponses | - |
dc.subject.keywordPlus | Raman investigations | - |
dc.subject.keywordPlus | Solar-blind photodetectors | - |
dc.subject.keywordPlus | Structural characterization | - |
dc.subject.keywordPlus | UV photodetectors | - |
dc.subject.keywordPlus | Visible spectrophotometries | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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