The growth of HVPE α-Ga2O3 crystals and its solar-blind UV photodetector applications
- Authors
- Lee, Moonsang; Yang, Mino; Lee, Hae-Yong; Lee, Hyun Uk; Lee, Hyunhwa; Son, Hyungbin; Kim, Un Jeong
- Issue Date
- Mar-2021
- Publisher
- Elsevier Ltd
- Keywords
- Hetero-epitaxy; Hydride vapor epitaxy; Solar-blind photodetector; α-Ga2O3
- Citation
- Materials Science in Semiconductor Processing, v.123
- Journal Title
- Materials Science in Semiconductor Processing
- Volume
- 123
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/43951
- DOI
- 10.1016/j.mssp.2020.105565
- ISSN
- 1369-8001
1873-4081
- Abstract
- While Ga2O3 crystals are considered as the next generation optoelectronic materials, the exploration of HVPE α-Ga2O3 crystals and their use as solar-blind UV photodetector are still insufficient. In this paper, we investigated the structural characterization of HVPE α-Ga2O3 materials and their properties as solar-blind photodetector. HVPE α-Ga2O3 exhibited excellent structural properties with relatively good crystallinity, and smooth surface morphology, without any complicated process. Raman investigations confirmed the existence of slight compressive strain in the as-grown HVPE α-Ga2O3. UV–visible spectrophotometry proved that HVPE α-Ga2O3 had an optical bandgap of 5.15 eV, evidencing the suitability of this material for application as solar-blind photodetector. Furthermore, the photodetector synthesized using HVPE α-Ga2O3 showed excellent photo-response characteristics. We believe that this study will support further development of functional oxide semiconductor materials and opto-electronic devices. © 2020
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