Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors
DC Field | Value | Language |
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dc.contributor.author | Jeon, Seong-Pil | - |
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Kim, Insoo | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2021-06-02T02:40:23Z | - |
dc.date.available | 2021-06-02T02:40:23Z | - |
dc.date.issued | 2020-12-30 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/44092 | - |
dc.description.abstract | Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal-oxygen bond formation, causing poor electrical performance and stability. Here, we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via elemental diffusion between metallic ion-doped InOx (M:InOx) ternary oxide semiconductor and AlOx gate dielectric layers. Particularly, it was revealed that metallic dopants such as magnesium (Mg) and hafnium (Hf) having a small ionic radius, a high Gibbs energy of oxidation, and bonding dissociation energy could successfully diffuse into the low-quality AlOx gate dielectric layer and effectively reduce the structural defects and residual impurities present in the bulk and at the semiconductor/dielectric interface. Through an extensive investigation on the compositional, structural, and electrical properties of M:InOx/AlOx thin-film transistors (TFTs), we provide direct evidences of elemental diffusion occurred between M:InOx and AlOx layers as well as its contribution to the electrical performance and operational stability. Using the elemental diffusion process, we demonstrate solution-processed Hf:InOx TFTs using a lowtemperature (180 degrees C) AlOx gate dielectric having a field-effect mobility of 2.83 cm(2) V-1.s(-1) and improved bias stability. Based on these results, it is concluded that the elemental diffusion between oxide semiconductor and gate dielectric layers can play a crucial role in realizing oxide TFTs with enhanced structural and interfacial integrity. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.0c16068 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.52, pp 57996 - 58004 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000605187100031 | - |
dc.identifier.scopusid | 2-s2.0-85098787138 | - |
dc.citation.endPage | 58004 | - |
dc.citation.number | 52 | - |
dc.citation.startPage | 57996 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | solution-processed amorphous oxide semiconductor (AOS) | - |
dc.subject.keywordAuthor | metal doping/diffusion | - |
dc.subject.keywordAuthor | metal ionic radius | - |
dc.subject.keywordAuthor | suppression of residual impurities/mobile ions | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | SUPPRESSION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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