Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation
DC Field | Value | Language |
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dc.contributor.author | Kim, K.-T. | - |
dc.contributor.author | Moon, S. | - |
dc.contributor.author | Kim, M. | - |
dc.contributor.author | Jo, J.-W. | - |
dc.contributor.author | Park, C.-Y. | - |
dc.contributor.author | Kang, S.-H. | - |
dc.contributor.author | Kim, Y.-H. | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2021-06-02T02:40:30Z | - |
dc.date.available | 2021-06-02T02:40:30Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/44101 | - |
dc.description.abstract | The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol–gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.06 cm2 V−1 s−1 and a threshold voltage of −0.99 V with less than 9% variation, followed by 10 000 bending cycles with a radius of 125 μm. More importantly, the site-specific monolithic formation of mesa pillar-structured devices can provide fully integrated logic circuits such as seven-stage ring-oscillators, meeting the industrially needed device density and scalability. To exploit the underlying stress-diffusive mechanism, a physical model is provided by using a variety of chemical, structural, and electrical characterizations along with multidomain finite-element analysis simulation. The physical models reveal that a highly scalable and robust device can be achieved via the site-specific mesa architecture, by enabling generation of multineutral layers and fine-tuning the accumulated stresses on specific element of devices with their diffusion out into the boundary of the mesa regions. © 2020 Wiley-VCH GmbH | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.202003276 | - |
dc.identifier.bibliographicCitation | Advanced Materials, v.32, no.40 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000564914100001 | - |
dc.identifier.scopusid | 2-s2.0-85090063170 | - |
dc.citation.number | 40 | - |
dc.citation.title | Advanced Materials | - |
dc.citation.volume | 32 | - |
dc.type.docType | Article | - |
dc.publisher.location | 독일 | - |
dc.subject.keywordAuthor | amorphous oxide thin-film transistors | - |
dc.subject.keywordAuthor | mesa-island structure | - |
dc.subject.keywordAuthor | scalability | - |
dc.subject.keywordAuthor | stress-diffusion | - |
dc.subject.keywordAuthor | ultraflexibility | - |
dc.subject.keywordPlus | Chemical analysis | - |
dc.subject.keywordPlus | Computer circuits | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Flexible electronics | - |
dc.subject.keywordPlus | II-VI semiconductors | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Sols | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Timing circuits | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Diffusive mechanisms | - |
dc.subject.keywordPlus | Electrical characterization | - |
dc.subject.keywordPlus | Implemented architectures | - |
dc.subject.keywordPlus | Mechanical robustness | - |
dc.subject.keywordPlus | Metal oxide thin-film transistors | - |
dc.subject.keywordPlus | Multidomain finite element analysis | - |
dc.subject.keywordPlus | Stage ring oscillators | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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