Effects of Er-Doping on Amorphous InZnSnO/InZnSnO: Er Double-Channel Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Yang, Ji-Woong | - |
dc.contributor.author | Na, Yun-Been | - |
dc.contributor.author | Shin, Jae-Heon | - |
dc.contributor.author | Hong, Chan-Hwa | - |
dc.contributor.author | Seo, Woo-Hyung | - |
dc.contributor.author | Kim, Kyung-Hyun | - |
dc.contributor.author | Song, Chang-Woo | - |
dc.contributor.author | Song, Sang-Hun | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Cheong, Woo-Seok | - |
dc.date.available | 2019-03-08T08:56:27Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4469 | - |
dc.description.abstract | We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO: Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO: Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effects of Er-Doping on Amorphous InZnSnO/InZnSnO: Er Double-Channel Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2017.14069 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp 3415 - 3419 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000397855000096 | - |
dc.identifier.scopusid | 2-s2.0-85015369750 | - |
dc.citation.endPage | 3419 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3415 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Doped Er | - |
dc.subject.keywordAuthor | a-IZTO TFT | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | Stability | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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