Effects of Er-Doping on Amorphous InZnSnO/InZnSnO: Er Double-Channel Thin-Film Transistors

Abstract

We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO: Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO: Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.