Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator
DC Field | Value | Language |
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dc.contributor.author | Seo, Woo-Hyung | - |
dc.contributor.author | Hong, Chan-Hwa | - |
dc.contributor.author | Yang, Ji-Woong | - |
dc.contributor.author | Na, Yun-Been | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Cheong, Woo-Seok | - |
dc.date.available | 2019-03-08T08:56:28Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4470 | - |
dc.description.abstract | We developed 30 '' window-unified capacitive touch screen panel (G2-TSP), where the transparent electrodes for sensing and driving lines were directly patterned on the glass. In this study, index-matched ITO as the main electrode was fabricated using by sputtering system which had sheet resistance of 30 ohm/square and transmittance of 88.6% at wavelength of 550 nm. We used SiOC of contact-hole type as a dielectric layer for high deposition rate and etching selectivity. Finally, we developed copper material (110 nm-thick) as bridge and bezel metal with sheet resistance of 2 ohm/square. From these processes, we successfully fabricated the 30 inch G2 TSP with no-short and open parts of TSP-cells. We fabricated G2 TSP with the wet-etching process, linearity of 0.86 mm and accuracy of 0.83 mm have been achieved. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2017.14068 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp 3089 - 3091 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000397855000035 | - |
dc.identifier.scopusid | 2-s2.0-85015385188 | - |
dc.citation.endPage | 3091 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3089 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Touch Screen Panel | - |
dc.subject.keywordAuthor | ITO | - |
dc.subject.keywordAuthor | SiOC | - |
dc.subject.keywordAuthor | Cu | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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