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Results 1-1 of 1 (Search time: 0.004 seconds).
The use of inductively coupled CF4/Ar plasma to improve the etch rate of ZrO2 thin films
Kim, H.-S.; Woo, J.-C.; Joo, Y.-H.;
Kim, C.-I.
Article
Issue Date
2013
Citation
Transactions on Electrical and Electronic Materials, v.14, no.1, pp 12 - 15
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한국전기전자재료학회
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Author
Kim, H.-S.
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Woo, J.-C.
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Chamber pressure
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Etch rates
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Etched surface
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Etching characteristics
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Gas mixing ratio
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ICP
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Inductively coupled plasma (ICP)
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Inductively-coupled
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Oxide bonds
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Photoelectrons
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