Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning
- Authors
- Yoon, Hana; Kim, Si-in; Lee, Sunghun; In, Juneho; Kim, Jihwan; Ryoo, Hyunseong; Noh, Jae-Hong; Ahn, Jae-Pyoung; Jo, Younghun; Choo, Jaebum; Kim, Bongsoo
- Issue Date
- Oct-2013
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.39, pp 6259 - 6264
- Pages
- 6
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 1
- Number
- 39
- Start Page
- 6259
- End Page
- 6264
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/45831
- DOI
- 10.1039/c3tc31214c
- ISSN
- 2050-7526
2050-7534
- Abstract
- We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-k dielectric Y-stabilized ZrO2 (110) substrates via a chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimensionally (3D)-kinked NWs are grown from the tip of the horizontal NWs homoepitaxially initiated by rotational twinning. Electrical measurements show that both horizontal and 3D-kinked CoGe NWs have low resistivity. The 3D-kinked NWs as well as free-standing metallic CoGe NWs integrated on Y-stabilized ZrO2 substrates could find applications as effective on-chip interconnects and nanoelectrodes for highly integrated nanoelectronic devices and as platforms for fuel cells and as efficient catalysts.
- Files in This Item
-
- Appears in
Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.