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Synthesis of CIGS absorber layers via a paste coating
- Issue Date
- Apr-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Thin films; X-ray diffraction; Solar cells; Semiconducting quarternary alloys; Solar cells
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.9, pp 2621 - 2625
- Pages
- 5
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 9
- Start Page
- 2621
- End Page
- 2625
- ISSN
- 0022-0248
1873-5002
- Abstract
- CuInxGa1-xSe2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 degrees C in the absence of a gas-phase selenium source. A pre-annealing process at 250 degrees C under ambient conditions performed before annealing (450 degrees C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films. (C) 2009 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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