Molecular dynamics study on channeling and lateral straggle for sharp shallow junction formation: Low energy As-ion implantation
- Authors
- Kang, JW; Hwang, HJ
- Issue Date
- May-1999
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.5, pp 477 - 479
- Pages
- 3
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 34
- Number
- 5
- Start Page
- 477
- End Page
- 479
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/47447
- ISSN
- 0374-4884
- Abstract
- We have investigated low-energy As-ion implantation by using an upgraded MDRANGE code to study the formation of sharp shallow junction depths. Simulations of 0.1 - 50 keV As-ion implantation into Si in the [100] direction and a 7 degrees tilt from the [100] direction show that channeling effects become unimportant below 2 keV. Even at the low energies considered in this work, it is shown that channeling must be carefully considered and that implantations into the [100] channel give sharp junctions close to the end of the range. Below 10 keV, As-ion implantation at a 7 degrees tilt is necessary for shallower junctions, because the profiles are estimated to be dominated more by channeling in the depth direction than by straggles in the lateral direction.
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