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The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating

Authors
Bae, Sung-HwanLee, SangminKoo, HyunLin, LongJo, Bong HyunPark, ChanWang, Zhong Lin
Issue Date
Sep-2013
Publisher
WILEY-V C H VERLAG GMBH
Keywords
vanadium dioxide nanowire; metal-to-insulator transition; memristor; non-volatile memory device; resistive switching device
Citation
ADVANCED MATERIALS, v.25, no.36, pp 5098 - 5103
Pages
6
Journal Title
ADVANCED MATERIALS
Volume
25
Number
36
Start Page
5098
End Page
5103
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/47957
DOI
10.1002/adma.201302511
ISSN
0935-9648
1521-4095
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College of Engineering > School of Mechanical Engineering > 1. Journal Articles

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공과대학 (기계공학부)
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