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A 0.007 mm 0.6 V 6 MS/s Low-Power Double Rail-to-Rail SAR ADC in 65-nm CMOS

Authors
Jo, Y.Kim, J.E.Baek, K.Kim, T.T.
Issue Date
Sep-2021
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Capacitors; Circuits and systems; compute-in-memory; double rail-to-rail; low-power; Parasitic capacitance; power-efficient.; Redundancy; SAR ADC; Signal to noise ratio; Switches; Transistors
Citation
IEEE Transactions on Circuits and Systems II: Express Briefs, v.68, no.9, pp 3088 - 3092
Pages
5
Journal Title
IEEE Transactions on Circuits and Systems II: Express Briefs
Volume
68
Number
9
Start Page
3088
End Page
3092
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48976
DOI
10.1109/TCSII.2021.3097126
ISSN
1549-7747
1558-3791
Abstract
A 0.007mm 0.6V 6MS/s 10b double rail-to-rail input range SAR ADC is implemented in 65-nm technology. The extended input range broadens the applications of the low-power SAR ADCs such as compute-in-memory. The proposed ADC occupies less area since it only needs additional two seriesconnected capacitors and a differential-difference comparator for double rail-to-rail operation. The set-and-down operation reduces the input-referred noise of the comparator by over ten times than complementary switching. The novel metal-insulator-metal and metal-oxide-metal capacitor hybrid cap-DAC architecture minimize the gain error of ADC. The prototype achieves SNR of 53.90-dB, SNDR of 52.12-dB, and SFDR of 60.39-dB, power of 12.98-muW, and FoM of 6.6-fJ/conv.-step.
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Baek, Kwang Hyun
창의ICT공과대학 (전자전기공학부)
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