강유전체 YMnO3 박막 식각에 대한 CF4 첨가효과
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재화 | - |
dc.contributor.author | 김경태 | - |
dc.contributor.author | 김창일 | - |
dc.contributor.author | 장의구 | - |
dc.contributor.author | 이철인 | - |
dc.date.accessioned | 2021-09-16T06:41:04Z | - |
dc.date.available | 2021-09-16T06:41:04Z | - |
dc.date.issued | 2002 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49265 | - |
dc.description.abstract | The etching behaviors of the ferroelectric YMnO3 thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of YMnO3 thin film is 300 Å/min at Ar/Cl2 of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 30℃. Addition of CF4 gas decrease the etch rate of YMnO3 thin film. From the results of XPS analysis, nonvolatile YFx compounds were found on the surface of YMnO3 thin film which is etched in Ar/Cl2/CF4 plasma. The etch profile of YMnO3 film is improved by addition of CF4 gas into the Ar/Cl2 plasma. These results suggest that YFx compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMnO3. | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | 강유전체 YMnO3 박막 식각에 대한 CF4 첨가효과 | - |
dc.title.alternative | Effect of CF4 Addition on Ferroelectric YMnO3 Thin Film Etching | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.15, no.4 | - |
dc.identifier.kciid | ART000893099 | - |
dc.description.isOpenAccess | N | - |
dc.citation.number | 4 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 15 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | Ferroelectric | - |
dc.subject.keywordAuthor | YMnO3 | - |
dc.subject.keywordAuthor | ICP | - |
dc.subject.keywordAuthor | Sidewall passivant | - |
dc.description.journalRegisteredClass | kci | - |
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