Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Pauzauskie, Peter | - |
dc.contributor.author | Yang, Peidong | - |
dc.contributor.author | Cho, Nam-Kyu | - |
dc.contributor.author | Park, Hyo-Derk | - |
dc.contributor.author | Suh, Eun-Kyung | - |
dc.contributor.author | Lim, Kee-Young | - |
dc.contributor.author | Lee, Hyung-Jae | - |
dc.date.accessioned | 2021-09-17T04:41:01Z | - |
dc.date.available | 2021-09-17T04:41:01Z | - |
dc.date.issued | 2004-10 | - |
dc.identifier.issn | 0370-1972 | - |
dc.identifier.issn | 1521-3951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49452 | - |
dc.description.abstract | We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 similar to 200 nm and lengths of 5 similar to 20 mum. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-bearn lithography. In our electrical measurement, the carrier concentration and mobility were approximate to 2 similar to 4 x 10(18) cm(-3) and 60 similar to 70 cm(2)/Vs, respectively. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssb.200404989 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.241, no.12, pp 2775 - 2778 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000224488800033 | - |
dc.citation.endPage | 2778 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2775 | - |
dc.citation.title | PHYSICA STATUS SOLIDI B-BASIC RESEARCH | - |
dc.citation.volume | 241 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 독일 | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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